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    • 专利摘要:
    A microelectromechanical (MEMS) Fabry-Perot interferometer (100) comprises a transparent substrate (110); a first metallic mirror structure (120) on the transparent substrate (110), comprising a first metal layer (121) and a first support layer (122-123); a second metallic mirror structure (130) above the first metallic mirror structure (120) on opposite side of the first metallic mirror structure (120) in view of the transparent substrate (110), the second metallic mirror structure (130) comprising a second metal layer (131) and a second support layer (132-133), wherein the first (122-123) and the second support layer (132-133) are parallel and comprising at least one of aluminum oxide or titanium dioxide; a Fabry-Perot cavity (140) between the first (122-123) and the second support layer (132-133), whereby the Fabry-Perot cavity (140) is formed by providing an insulation layer (141) on the first mirror structure (120), and at least partially removing the insulation layer (141) after providing the second mirror structure (130); and electrodes (150-151) for providing electrical contacts to the first (121) and the second metal layer (131).
    公开号:FI20175641A1
    申请号:FI20175641
    申请日:2017-07-03
    公开日:2019-01-04
    发明作者:Heikki Saari；Bin Guo；Anna Rissanen
    申请人:Teknologian Tutkimuskeskus Vtt Oy；
    IPC主号:
    专利说明:

    MICROELECTROMECHANICAL (MEMS) FABRY-PEROT INTERFEROMETER, APPARATUS AND METHOD FOR MANUFACTURING FABRY-PEROT INTERFEROMETER
    TECHNICAL FIELD
    The present application generally relates to a semiconductor apparatus. In particular, but not exclusively, the present application relates to a Fabry-Perot Interferometer (FPI), a method for producing a Fabry-Perot Interferometer (FPI), and an apparatus. More specifically, the present application relates to electrically tunable Fabry-Perot Interferometers (FPI) that are produced with microelectromechanical (MEMS) technology.
    BACKGROUND
    [0002] This section illustrates useful background information without the admission of any technique described as being representative of the state of the art.
    Fabry-Perot interferometers (FPIs) are typically used as optical filters and in spectroscopic sensors, for example. The Fabry-Perot Interferometer (FPI) is based on parallel mirrors, and a (Fabry-Perot) cavity is formed into a gap between the mirrors.
    The pass band wavelength of a Fabry-Perot interferometer (FPI) can be controlled by adjusting the distance between the mirrors i.e. the width of the gap. The tuning is usually made electrically.
    Microelectromechanical technology can be used to produce electrically tunable Fabry-Perot interferometers (FPI). Prior art structure of a microelectromechanical interferometer usually includes layers of silicon, electrically conductive layers and reflective layers are doped. A movable mirror is provided by removing a sacrificial layer of silicon dioxide which has been formed between two mirror layers. The position of a movable mirror is controlled by the applied voltage to the electrodes included in the mirror structures.
    The microelectromechanical production technology allows series production of interferometers. However, there are some disadvantages with prior art solutions for the production of interferometers and interferometer components.
    Known solutions utilize silver-coated mirrors within Fabry-Perot interferometers (FPI). Also, cutting, encapsulating and transporting the interferometers require special handling because of the movable, released mirror. The released mirror is sensitive to environmental stress, such as physical pressure, changes in temperature or humidity, contamination, etc.
    Due to the relatively high cost of production of interferometers, it has not been possible to use them in mass product applications where the cost requirements are strict.
    A further disadvantage of the known solutions relates to the inability to provide a gap with a short distance between the mirrors. This is due to the wet etching process where providing narrow gaps is difficult. Also, when Fabry-Perot interferometers (FPIs) are produced for visible and ultraviolet light, the optical layers need to be thin. Thin membranes are often discontinuous and include pinholes. Such membranes easily become damaged during wet etching. Therefore, prior art technology is not suitable for producing electrically tunable Fabry-Perot interferometers (FPIs) for short wavelengths such as visible and ultraviolet range. [0010] It is the aim of the present invention to provide a method and apparatus that mitigates for the above problem of state of the art.
    SUMMARY
    Various aspects of the invention are set forth in the claims.
    According to a first example aspect of the present invention, there is provided a microelectromechanical (MEMS) Fabry-Perot interferometer comprising: a transparent substrate; a first metallic mirror structure on the transparent substrate comprising a first metal layer and a first support layer; a second metallic mirror structure above the first metallic mirror structure on the opposite side of the first metallic mirror structure in a view of the transparent substrate, the second metallic mirror structure comprising the second metal layer and the second support layer, the layer being parallel and comprising at least one of aluminum oxide or titanium dioxide; a Fabry-Perot cavity between the first and second support layer, whereby the Fabry-Perot cavity is formed by providing an insulation layer on the first mirror structure, and at least partially removing the insulation layer after providing the second mirror structure; and electrodes for providing electrical contacts to the first and second metal layer.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: a first aluminum oxide layer arranged below the transparent substrate; and a second aluminum oxide layer arranged above the transparent substrate, being the second aluminum oxide layer being part of the first support layer of the first metallic mirror structure.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: a lower insulation layer arranged below the first aluminum oxide layer, the lower insulation layer comprising a tetraethyl orthosilicate.
    In an embodiment, the first metal layer of the first metal mirror structure is arranged above the second aluminum oxide layer.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: a third aluminum oxide layer arranged above the first metal layer, being part of the first support layer of the first metallic mirror structure .
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: a first electric contact arranged to connect the first metal layer (121), a portion of the third aluminum oxide layer being removed between the first electric contact and first metal layer by wet etching.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: the insulation layer arranged above the third aluminum oxide layer, the insulation layer comprising a tetraethyl orthosilicate.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: a fourth aluminum oxide layer arranged above the insulation layer, being part of the second support layer of a second metallic mirror structure.
    In an embodiment, the second metallic mirror structure is arranged above the fourth aluminum oxide layer.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: a fifth aluminum oxide layer arranged above the second metal layer, being part of the second support layer of a second metallic mirror structure .
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer further comprises: a second electric contact arranged with the second metal layer, a portion of the fifth aluminum oxide layer being removed between the second electric contact and the second metal layer by wet etching.
    In an embodiment, the second metallic mirror structure comprises through holes for removing at least part of the insulation layer to provide a tunable Fabry-Perot cavity between the first and second metallic mirror structures.
    [0024] In an embodiment, the transparent substrate comprises fused quartz glass or fused silica glass; the aluminum oxide comprises AI2O3; and the Titanium dioxide comprises TiO2.
    At least one layer comprises an Atomic Layer Deposition (ALD) grown aluminum oxide layer or a plasma enhanced chemical vapor deposition (PECVD) layer.
    According to another aspect of the present invention, there is provided a semiconductor apparatus comprising a Fabry-Perot interferometer of the first aspect.
    According to a third aspect of the present invention, there is provided a method for manufacturing a microelectromechanical (MEMS) Fabry-Perot interferometer comprising: providing a transparent substrate; depositing a first metallic mirror structure on the transparent substrate comprising a first metal layer and a first support layer; depositing a second metallic mirror structure above the first metallic mirror structure on the opposite side of the first metallic mirror structure in a view of the transparent substrate, the second metallic mirror structure comprising the second metal layer and the second support layer, thereby the first and second the support layer being parallel and comprising at least one of aluminum oxide or titanium dioxide; forming a Fabry-Perot cavity between the first and second support layer, whereby the cavity is formed by providing an insulation layer on the first metallic mirror structure, and at least partially removing the insulation layer after providing the second metallic mirror structure; and forming electrodes for providing electrical contacts to the first and second metal layer.
    Different non-binding example aspects and embodiments of the present invention have been illustrated in the foregoing. The embodiments in the foregoing are merely used to explain selected aspects or steps that may be utilized in the implementations of the present invention. Some embodiments may be presented with reference only to certain aspects of the invention. It should be appreciated that corresponding embodiments may apply to other aspects of the example as well.
    BRIEF DESCRIPTION OF THE DRAWINGS
    For a more complete understanding of the embodiments of the present invention, the reference is now made to the following description of the connection with the accompanying drawings: [0030] Figure 1 illustrates a schematic view of a microelectromechanical system (MEMS ) A Fabry-Perot interferometer according to an embodiment of the invention; Figure 2 illustrates another schematic view of a microelectromechanical system (MEMS) Fabry-Perot interferometer according to an embodiment of the invention; Figure 3 shows the phases of an exemplary production process of an electrically tunable Fabry-Perot interferometer (FPI) according to the invention; Fig. 4 shows a flow chart of a method according to an embodiment of the invention; and Figure 5 illustrates another schematic view of an apparatus comprising a microelectromechanical system (MEMS) Fabry-Perot interferometer according to an embodiment of the invention.
    DETAILED DESCRIPTON OF THE DRAWINGS
    In embodiments, it is disclosed in a microelectromechanical (MEMS) Fabry-Perot interferometer. The microelectromechanical (MEMS) Fabry-Perot interferometer technology can also be used within an integration platform for multichip module technology with hybrid integrated circuits, for example.
    The microelectromechanical (MEMS) Fabry-Perot interferometer technology can be manufactured to any transparent substrate that is suitable for thin film processing in clean rooms. Fused silica, or quartz is typically used for MEMS applications due to their good properties.
    Fused quartz and fused silica are the amorphous form of quartz. Fused quartz is made from purifying and melting natural crystalline quartz, usually a natural quartz sand. Fused silica is a purer version of a fused quartz that is made from various Silicon gasses. Chemically known as S1O2, silica is "pure" glass. All other commercial glasses are S1O2 with other dopants added to lower melting temperature and modify optical, thermal and mechanical characteristics.
    Transparent substrate of fused quartz or fused silica provide many advantages. Such a substrate has an extremely low coefficient of expansion, making it far more shock resistant than any other refractory material. It has better transmission characteristics of any standard glass: 220 nanometers to 3 microns for standard semiconductor-grade fused quartz, and 175 nanometers to 3 microns for many types of fused silica. It has the highest temperature characteristics of any glass. A continuous maximum of 900C to 1100C, depending on the size and shape of the part and can be used up to 1400C for short periods of time. Dielectric constant is very low and it has the lowest loss tangent of almost all known materials. Thermal conductivity is very low and it can be melted, bent, fused, drawn, welded into tube and rod forms, ground and polished. It is harder than most glasses and can be made into any shape and is relatively large in size and has excellent resistance to non-fluorinated acids, solvents and plasma, and is excellent for containing many high purity chemicals but still less expensive than Sapphire for larger parts .
    The present invention and its potential advantages are understood by referring to Figs. 1 through 5 of the drawings. In this document, like reference signs denote like parts or steps.
    Figure 1 illustrates a schematic view of microelectromechanical (MEMS)
    Fabry-Perot interferometer 100 according to an embodiment of the invention.
    The semiconductor apparatus may comprise the Microelectromechanical (MEMS) Fabry-Perot Interferometer 100 and further elements such as may be coupled to the top or below of the Microelectromechanical (MEMS) Fabry-Perot Interferometer 100. Furthermore, the circuit board (not shown) may be coupled on top or below of the microelectromechanical (MEMS) Fabry-Perot interferometer 100. The solder ball may be utilized for coupling.
    The semiconductor apparatus may further comprise an integrated passive device (IPD) that may comprise a capacitor (e.g., a decoupling capacitor), a resistor, or an inductor in some implementations. The integrated passive device (IPD) may be arranged on a first surface (e.g., a top surface) or a second surface of a semiconductor apparatus, for example.
    The microelectromechanical (MEMS) Fabry-Perot interferometer 100 comprises a transparent substrate 110, a first metallic mirror structure 120, a second metallic mirror structure 130, a Fabry-Perot cavity 140 and electrodes 150-151.
    The first metallic mirror structure 120 is arranged on the transparent substrate 110, comprising a first metal layer 121 and a first support layer 122-123. The second metallic mirror structure 130 is arranged above the first metallic mirror structure 120 on the opposite side (above in Fig. 1) of the first metallic mirror structure 120 (below), the second metallic mirror structure 120 (below), structure 130 comprises a second metal layer 131 and a second support layer 132-133, the first 122-123 and a second support layer 132-133 being substantially parallel and comprising at least one of Aluminum oxide or Titanium dioxide.
    The Fabry-Perot cavity 140 is generated between the first 122-123 and the second support layer 132-133, whereby the Fabry-Perot cavity 140 is formed by providing an insulation layer 141 on the first mirror structure 120, and at at least partially removing the insulation layer 141 after providing the second mirror structure 130. By forming such a cavity 140, the second metallic mirror structure 130 becomes movable toward the first metallic mirror structure 120 through electrostatic actuation provided by the drive electrodes.
    [0047] At least two electrodes 150-151 are arranged for providing electrical contacts to the first 121 and the second metal layer 131.
    The first Aluminum oxide layer 111 may be arranged below the transparent substrate 110, and the second Aluminum oxide layer 122 is arranged above the transparent substrate 110, being part of the first support layer 122-123. of first metallic mirror structure 120.
    The lower insulation layer 112 may be arranged below the first Aluminum oxide layer 111, the lower insulation layer 112 comprising tetraethyl orthosilicate (TEOS).
    In an embodiment, at least one insulation layer 112, 141 may comprise a silicon dioxide made from tetraethyl orthosilicate (TEOS), for example.
    [0051] The first metal layer 121 of the first metallic mirror structure 120 may be arranged above the second Aluminum oxide layer 122.
    The third Aluminum oxide layer 123 may be arranged above the first metal layer 121, the third Aluminum oxide layer 123 being part of the first support layer 122-123 of the first metallic mirror structure 120.
    The first electric contact 150 may be arranged to connect with the first metal layer 121, the portion of the third aluminum oxide layer 123 being removed between the first electric contact 150 and the first metal layer 121 by wet etching, for example. . Dry etching may also be used, for example when selectivity is enough. The insulation layer 141 may be arranged above the third Aluminum oxide layer 123, the insulation layer 141 comprising tetraethyl orthosilicate (TEOS).
    The fourth aluminum oxide layer 132 may be arranged above the insulation layer 140, the fourth aluminum oxide layer 132 being part of the second support layer 132-133 of the second metallic mirror structure 130.
    The second metal layer 131 of the second metallic mirror structure 130 may be arranged above the fourth Aluminum oxide layer 132.
    The fifth aluminum oxide layer 133 may be arranged above the second metal layer 131, the fifth aluminum oxide layer 133 being part of the second support layer 132-133 of the second metallic mirror structure 130.
    The second electric contact 151 may be arranged to connect with the second metal layer 131, the portion of the fifth aluminum oxide layer 133 being removed between the second electric contact 151 and the second metal layer 131 by wet etching, for example. .
    The second metallic mirror structure 130 comprises through-holes 134 for removing at least part of the insulation layer 141 to provide the Fabry-Perot cavity 140 between the first 120 and the second metallic mirror structure 130.
    In an embodiment, the Fabry-Perot cavity 140 is processed by removing a sacrificial oxide layer (portion of the insulation layer 141) by HF vapor. Hydrofluoric acid (HF) is an ideal etchant for the silicon oxide types used in micromachining since it allows fast etch rates and is highly selective against Silicon. HF etching may be used for the removal of sacrificial oxide layers in MEMS fabrication.
    In an embodiment, the transparent substrate 110 comprises fused quartz glass or fused silica glass, the aluminum oxide comprises AI2O3 and the titanium dioxide comprises T1O2, for example.
    At least one of the support layers 122-123, 132-133 comprises AI2O3 or T1O2 coated Fabry-Perot interferometer (FPI) mirrors.
    AI2O3 coating may be deposited using ALD (Atomic Layer Deposition), for example.
    AI2O3 may also be used as a protection layer for the metal layer 121, 131 during the fabrication process flow, for example against wet etch.
    [0065] In an embodiment, the first 121 and second metal layer 131 may be patterned into certain shapes and / or multiple areas while such shapes / areas may form electrostatic actuation to at least one of the mirror structures 120, 130.
    In an embodiment, the first metallic mirror structure 120 comprises at least one groove 124 to divide the first metal layer 121 into several areas that may form actuation / drive electrodes. By connecting such electrodes to certain DC or AC signal, the second mirror structure 130 can be pulled towards the first mirror structure 120.
    In an embodiment, the mirror functionality is provided by a metallic layer 121, 131. Furthermore, the target is to provide a suspended metallic mirror structure 130 that forms a tunable Fabry-Perot interferometer 100 when combined with the bottom metal layer 121 and associated. metallic mirror structure 120. Aluminum oxide layers may be arranged to support the metal layer (s) for such structure (s).
    [0068] In an embodiment, the first metal layer 121 may be etched into certain shapes and / or multiple areas and may form grooves 124.
    [0069] In an embodiment, the first second layer 131 may be etched into certain shapes and / or multiple areas and may form grooves and / or through holes 134.
    Figure 2 illustrates another schematic view of a microelectromechanical (MEMS) Fabry-Perot interferometer 100 according to an embodiment of the invention.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer 100 further comprises an electrical control of at least one of the metallic mirror structures 120, 130. At least one of the metallic mirror structures 120, 130 may be utilized as a beam structure (eg second metallic mirror structure 130) in which both ends are fixed to a fixed element of the microelectromechanical (MEMS) Fabry-Perot interferometer 100.
    In an embodiment, the microelectromechanical (MEMS) Fabry-Perot interferometer 100 may further comprise at least one lower drive electrode 210 provided below, and at least one upper drive electrode 211 provided. on the lower surface of the beam structure (eg second metallic mirror structure 130) facing the substrate 110. Thus, when the potential difference is arranged between the upper drive electrode 211 and the lower drive electrode 210, mirror structure 130) is attracted towards the substrate 110 by an electrostatic attractive force, that is, the distance between the metallic mirror structures 120, 130 is changed and properties of the microelectromechanical (MEMS) Fabry-Perot interferometer 100 are adjusted based on the control signal for electrodes 210, 211.
    In an embodiment, the drive electrodes 210, 211 may be integrated with metal layers 121, 131 of the metal mirror structures 120, 130, respectively, to provide bias voltage for the potential difference.
    Also, the Fabry-Perot cavity 140 (air gap) exists between the metallic mirror structures 120, 130 and also between the electrodes 210, 211.
    [0075] In an embodiment when a bias voltage (over drive electrodes or metal layers) is applied, at least one electrode may be thermally expanded and shifts in the direction of the cavity 140.
    [0076] In an embodiment, when the bias voltage is applied, the second bias electrode 131, 211 may be charged positively resulting in a buildup of positive (+) charges, and the first bias electrode 121, 210 may be charged negatively resulting in. a buildup of (-) charges. Meanwhile, the charge on the cavity 140 may be maintained at 0, independent of the application of a bias voltage. In practice, however, charge buildup often occurs to the cavity 140. Thus, the detected charge on the insulator within 140 is not always 0.
    [0077] In an embodiment, the metallic mirror structures 120, 130 are movable in relation to each other in an alternative way. The bottom metal layer 121 of the metallic mirror structure 120 may be patterned (grooves 124) to form electrode areas (Portions between grooves 124) that together with the patterned upper mirror electrode 131 areas can be used for electrostatic actuation of the upper mirror structure 130 either in DC or AC mode, for example.
    Figure 3 shows the phases of an exemplary production process of an electrically tunable Fabry-Perot interferometer (FPI) according to an embodiment of the invention.
    In phase 310, a transparent substrate 110, such as a quartz substrate, is provided and both upper and lower surfaces of the transparent substrate 110 are coated using aluminum oxide, such as AI2O3, to provide a first aluminum oxide layer 111. below the transparent substrate 110 and a second aluminum oxide layer 122 arranged above the transparent substrate 110.
    Thickness of the layers 111, 122 is typically a quarter or half of the operating wavelength of the radiation within the material of the layer in question. In this case the thickness of the layers 111, 122 may be 20nm, for example. These layers 111, 122 can be deposited on the substrate 110 by an ALD (Atomic Layer Deposition) process, for example. The temperature of the ALD process can be e.g. 100-300 ° C. However, since the insulation layer (for the FPI cavity) of the polymer has not been provided at this stage, it is also possible to use alternative processes that utilize higher temperatures.
    In phase 320, the lower insulation layer 112 is arranged below the first Aluminum oxide layer 111, the lower insulation layer 112 comprises tetraethyl orthosilicate (TEOS). The lower insulation layer 112 may be deposited using ALD, for example. Thickness of the lower insulation layer 112 may be, for example, 50nm. Furthermore, the first metal layer 121 is arranged on top of the second aluminum oxide layer 122. The first metal layer 121 may comprise Ag (silver), for example. The first metal layer 121 may be formed by sputtering or evaporation of a suitable metal, such as Ag, for example. The first metal layer 121 forms an electrode of a mirror of the FPI 100. The first metal layer 121 may be patterned and wet etched in order to remove the metal from the required location 321 outside the pattern. For example, the first metal layer 121 may be etched into certain shapes and / or multiple areas and may form grooves 124.
    In phase 330, the third Aluminum oxide layer 123 is arranged above the first metal layer 121, the third Aluminum oxide layer 123 is part of the first support layer 122-123 of the first metallic mirror structure 120. The layer 123 can be deposited by an ALD (Atomic Layer Deposition) process, for example. Thickness of the layer 123 may be 20nm, for example.
    An insulation layer 331 is arranged above the third Aluminum oxide layer 123, the insulation layer 331 comprises tetraethyl orthosilicate (TEOS). The insulation layer 331 may be deposited using ALD, for example. Thickness of the insulation layer 331 may be, for example, 50nm.
    Furthermore, the first electric contact 150 is arranged to connect with the first metal layer 121, the portion of the third aluminum oxide layer 123 (and the insulation layer 331) is removed between the first electric contact 150 and the first metal layer 121 by wet etching, for example.
    In phase 340, the insulation layer 141 is arranged above the third Aluminum oxide layer 123 (and the insulation layer 331), the insulation layer 141 comprises tetraethyl orthosilicate (TEOS), for example. The insulation layer 141 can be deposited by an ALD (Atomic Layer Deposition) process, for example. Thickness of the layer 141 may be 1450nm, for example.
    Furthermore, the insulation layer 141 may be etched using Oxide Etching, for example STS AOE (Advanced Oxide Etch) above first electric contact 150.
    In phase 350, a fourth aluminum oxide layer 132 is arranged above the insulation layer 141. The fourth aluminum oxide layer 132 can be deposited by an ALD (Atomic Layer Deposition) process, for example. Thickness of the layer 132 may be 70nm, for example.
    Further, the second metal layer 131 is arranged above the fourth Aluminum oxide layer 132, and the fifth Aluminum oxide layer 133 is arranged above the second aluminum oxide layer 132 and the fifth Aluminum oxide layer 133 being part of the second support layer 132-133 of the second metallic mirror structure 130.
    The second metal layer 131 may comprise Ag (silver), for example. The second metal layer 131 may be formed by using sputtering or evaporation of a suitable metal, such as Ag, for example. The second metal layer 131 forms an electrode of a mirror of the FPI 100. The second metal layer 131 may be patterned and wet etched in order to remove the metal from the required location outside the pattern.
    The fourth and fifth aluminum oxide layer 132-133 can be deposited by an ALD (Atomic Layer Deposition) process, for example. Thickness of each layer 132, 133 may be 70nm, for example. Above the fifth Aluminum oxide layer 133 a further insulation layer insulation layer 351 may be arranged, the further insulation layer comprises tetraethyl orthosilicate (TEOS), for example. The further insulation layer 351 can be deposited by an ALD (Atomic Layer Deposition) process, for example. Thickness of further insulation layer 351 may be 50nm, for example. Furthermore, the second electric contact 151 is arranged to connect with the second metal layer 131, and a portion of the fifth aluminum oxide layer 133 (and further insulation layer 351) is removed between the second electric contact 151 and the second metal layer 131 by wet etching, for example.
    The second electric contact 151 may consist of Aluminum with a thickness of 500nm, for example.
    In phase 360, the second metallic mirror structure 130 is processed to provide through-holes 134 for removing at least part of the insulation layer 141 to provide the Fabry-Perot cavity 140 between the first 120 and the second metallic mirror structure 130 .The patterning and etching can be used to provide through-holes 134 in the second metallic mirror structure 130. These holes are needed to remove a portion of the insulation layer 141. Furthermore, the insulation layer 141 and the second support layer 132-133. may be etched using Oxide Etching, for example STS AOE (Advanced Oxide Etch) above first electric contact 150. Plasma etching may be used to process through-holes 134 to second metallic mirror structure 130.
    Furthermore, backside lithography is performed as well as wet etching, the front side being protected by photoresist (PR). Portion of the lower insulation layer 112 is removed and the metal layer elements 361 (of Aluminum, for example) are arranged below the lower insulation layer 112. By removing the portion of the lower insulation layer 112, an Aperture is provided. The Aperture may be used for passing light to the FPI 100, for example.
    [0095] In an embodiment, deposition at least one layer may be utilized using PECVD silane process / oxidation, for example.
    [0096] In an embodiment, at least one barrier layer may be formed to extend a metal layer element onto a surface of at least one metal layer.
    The barrier layer may comprise a low-pressure chemical vapor deposition nitride (LPCVD SiN) or a plasma enhanced chemical vapor deposition nitride (PECVD SiN).
    At least one insulation layer of the semiconductor apparatus may comprise a plasma enhanced chemical vapor deposition (PECVD) layer such as tetraethylorthosilicate (TEOS).
    Figure 4 shows a flow chart of a method according to an embodiment of the invention.
    The method for manufacturing a microelectromechanical (MEMS) Fabry-Perot interferometer is started in step 410.
    In step 420, a transparent substrate is provided. This step may comprise, for example, bringing the substrate into the reaction space of a typical Reactor tool, e.g. a tool suitable for carrying out an ALD-type process.
    In step 430, a first metallic mirror structure is deposited on a transparent substrate, comprising a first metal layer and a first support layer.
    In step 440, the second metallic mirror structure is deposited above the first metallic mirror structure on the opposite side of the first metallic mirror structure, in view of the second metallic mirror structure comprising the second metal layer and the second support layer, the first and second support layer being parallel and comprising at least one of aluminum oxide or titanium dioxide.
    In step 450, a Fabry-Perot cavity is formed between the first and second support layer, whereby the cavity is formed by providing an insulation layer on the first metallic mirror structure, and at least partially removing the insulation layer after providing. the second metallic mirror structure.
    In step 460, the electrodes are formed for providing electrical contacts to the first and second metal layers.
    In step 470, method ends.
    [00107] The above method steps may be carried in a different order than presented and further steps may be carried out between the steps of Figure 4.
    In an embodiment, a passivating layer that comprises Aluminum oxide may be formed on a surface of a substrate to protect from the effects caused by a chemical interaction between the passivating layer and a conducting electrode by fabricating a barrier layer between the passivating layer and the conducting electrode.
    The barrier layer comprises Titanium and oxygen, tantalum and oxygen, zirconium and oxygen, hafnium and oxygen, or a combination of any of these with Aluminum and oxygen, the passivating layer may be deposited. by exposing the passivating layer in a reaction space to alternately repeated surface reactions of two or more different precursors, at least one of the precursors for oxygen, and forming the conducting electrode on the barrier layer deposited on the passivating layer by making a layer consisting of Aluminum paste on the barrier layer.
    The reaction space may be further pumped down to a pressure suitable for forming the passivating layer comprising Aluminum oxide. The reaction space can be pumped down to a suitable pressure using e.g. a mechanical vacuum pump or, in the case of atmospheric pressure ALD systems and / or processes, gas flows can be set to protect the deposition zone from the atmosphere. The substrate may also be heated to a temperature suitable for forming the passivating layer by the method used. The substrate can be introduced to the reaction space through e.g. an airtight load-lock system or simply through a loading Hatch. The substrate can be heated by e.g. resistive heating elements that also heat the entire reaction space.
    After the substrate and reaction space have reached the target temperature and other conditions suitable for deposition, the silicon surface can be conditioned such that the passivating deposit may be substantially directly deposited on the surface. This conditioning of the surface on which the passivating layer is deposited can include chemical purification of the surface of the film from impurities and / or oxidation. Especially removal of the oxide is beneficial when the silicon surface has been introduced into the reaction space via an oxidizing environment, e.g. when transporting the exposed surface from one deposition tool to another. The details of the process for removing impurities and / or oxide from the surface of the Silicon film will be obvious to the skilled person in view of this Specification. In some embodiments of the invention, the conditioning can be done ex-situ, i.e. outside the tool suitable for ALD-type processes.
    After the substrate has been conditioned, an alternative exposure of the deposition surface to the different precursor chemicals may be initiated, to form a passivating layer (comprising e.g. aluminum oxide) directly on the Silicon substrate.
    Each exposure of the deposition surface to a precursor results in the formation of an additional deposit on the deposition surface, as a result of the adsorption reactions on the corresponding precursor to the deposition surface.
    A typical Reactor suitable for ALD-type deposition comprises a system for introducing a carrier gas, such as nitrogen or argon into the reaction space, such that the reaction space can be purged from the Surplus chemical and reaction products prior to introducing the next precursor. chemical into the reaction space. This feature together with the controlled dosing of vaporized precursors enables alternatively exposing the substrate surface to precursors without significant intermixing of different precursors in the reaction space or in other parts of the Reactor. In practice, the flow of the carrier gas is usually continuous through the reaction space and only the various precursors are alternatively introduced to the reaction space with the carrier gas.
    [00114] Thickness of the passivating layer on the substrate can be controlled by the number of exposures of the deposition surface to the different precursors. The thickness of the passivating layer is increased until the target thickness is reached, after which at least one insulator layer is deposited.
    Deposition of the insulation layer, in one embodiment of the invention, is carried out in an ALD-type process in the same deposition tool directly after the deposition of the passivating layer has ended. In this case, the deposition of the insulator layer can begin simply by changing the precursor chemicals from those used for the deposition of the passivating layer to those suitable for the deposition of the insulator layer.
    In an embodiment, the semiconductor apparatus comprises a bond wire package including a microelectromechanical (MEMS) Fabry-Perot interferometer stacked on a die. The die may be disposed on a leadframe. The leadframe may be a pin grid array (PGA) package, a quad flat non-leaded (QFN) package or other package. The leadframe may comprise first pads and may be mounted on a PCB. An intermediate layer may be disposed between the microelectromechanical (MEMS) Fabry-Perot interferometer and the die and connect the microelectromechanical (MEMS) Fabry-Perot interferometer to the die. The microelectromechanical (MEMS) Fabry-Perot interferometer, the die, and the intermediate layer may replace the microelectromechanical (MEMS) Fabry-Perot interferometer, and the die.
    In addition, metallization layers may include passive devices, portions of passive devices, and / or interconnect devices (e.g., couplers, jumpers, traces, etc.).
    The microelectromechanical (MEMS) Fabry-Perot interferometer may include an insulation layer or a second substrate, and the metallization layers. The insulation layer or the second substrate is disposed between the metallization layers. The insulation layer or the second substrate may include vias. The vias may be through glass vias (TGVs) or through Silicon vias (TSVs).
    Additional pads may be disposed on the microelectromechanical (MEMS) Fabry-Perot interferometer. The pads may be connected to the first pads by bond wires. The pads may be connected to the metallization layer and / or passive devices in the metallization layer, for example.
    Microelectromechanical (MEMS) Fabry-Perot Interferometer (FPI) 100 chips, as disclosed, may cover larger wavelength ranges than dielectric mirror MEMS-FPIs. Typically, the dielectric mirror MEMS-FPI can be tuned in the wavelength range ± 10 ... 15% around the design wavelength. Outside the operational wavelength range the dielectric mirror MEMS-FPI has high transmission. However, the metallic mirror of the microelectromechanical (MEMS) Fabry-Perot interferometer (FPI) 100 transmits only spectral bands for which the FPI air gap 140 corresponds to a constructive interference. This is why it can be used in wide spectral range Hyperspectral imagers based on RGB type image sensor, for example.
    Figure 5 illustrates another schematic view of an apparatus 500 comprising a microelectromechanical system (MEMS) Fabry-Perot interferometer (FPI) 100 according to an embodiment of the invention.
    The apparatus 500 may comprise, for example, a Hyperspectral Imager. In an embodiment, the Hyperspectral Imager 500 comprises a microelectromechanical (MEMS) Fabry-Perot Interferometer (FPI) 100, as shown. The Microelectromechanical (MEMS) Fabry-Perot Interferometer (FPI) 100 is arranged on a supporting plate 710 that comprises an Aperture for light, for example. See, for example, Figs 1-3 for generating the Aperture.
    In an embodiment, a microelectromechanical system (MEMS) Fabry-Perot interferometer (FPI) chip 100 is placed between two wafer level optics lenses 720-730. The first lens 720 (wafer level imaging lens) collimates the light Entering the FPI 100 and the second lens 730 (wafer level focusing lens) focuses on an image from a target to an image sensor 740. Thus, it is possible to build a very compact Hyperspectral Imager 500 within a Cubic centimeter dimension.
    Without limiting the scope, interpretation, or application of claims appearing below, the technical effect of one or more of the embodiments disclosed is an improved performance of a microelectromechanical (MEMS) Fabry-Perot interferometer. Another technical effect of one or more of the embodiments disclosed is an improved fabrication process of a microelectromechanical (MEMS) Fabry-Perot interferometer. Another technical effect of one or more of the embodiments disclosed is the provision of a reliable and compact semiconductor apparatus. Still another technical effect of one or more of the embodiments disclosed is a limited size of microelectromechanical (MEMS) Fabry-Perot interferometer with a wide variety of operating wavelengths.
    Although various aspects of the invention are contemplated in the independent claims, other aspects of the invention comprise the other combinations of the features described and / or the dependent claims with the features of the independent claims, and not solely the combinations. explicitly set out in the claims. [00127] It is also noted that while describing the embodiments of the invention, these Descriptions should not be viewed in a limiting sense. Rather, there are several variations and modifications that can be made without departing from the scope of the present invention as defined in the appended claims.
    权利要求:
    Claims (15)
    [1] 1. A microelectromechanical (MEMS) Fabry-Perot interferometer (100), comprising:
    5 a transparent substrate (110);
    a first metallic mirror structure (120) on the transparent substrate (110), comprising a first metal layer (121) and a first support layer (122-123);
    a second metallic mirror structure (130) above the first metallic mirror structure (120) on opposite side of the first metallic mirror structure (120) in view of 10 the transparent substrate (110), the second metallic mirror structure (130) comprising a second metal layer (131) and a second support layer (132-133), wherein the first (122-123) and the second support layer (132-133) are parallel and comprising at least one of aluminum oxide or titanium dioxide;
    a Fabry-Perot cavity (140) between the first (122-123) and the second
    15 support layer (132-133), whereby the Fabry-Perot cavity (140) is formed by providing an insulation layer (141) on the first mirror structure (120), and at least partially removing the insulation layer (141) after providing the second mirror structure (130); and electrodes (150-151) for providing electrical contacts to the first (121)
    20 and the second metal layer (131).
    [2] 2. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 1, further comprising:
    a first aluminum oxide layer (111) arranged below the transparent
    25 substrate (110); and a second aluminum oxide layer (122) arranged above the transparent substrate (110), wherein the second aluminum oxide layer (122) being part of the first support layer (122-123) of the first metallic mirror structure (120).
    30
    [3] 3. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 2, further comprising:
    a lower insulation layer (112) arranged below the first aluminum oxide layer (111), wherein the lower insulation layer (112) comprising tetraethyl orthosilicate.
    20175641 prh 03 -07- 2017
    [4] 4. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 2 or 3, wherein the first metal layer (121) of the first metallic mirror structure (120) is arranged above the second aluminum oxide layer (122).
    [5] 5. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 4, further comprising:
    a third aluminum oxide layer (123) arranged above the first metal layer (121) , wherein the third aluminum oxide layer (123) being part of the first support
    10 layer (122-123) of the first metallic mirror structure (120).
    [6] 6. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 5, further comprising:
    a first electric contact (150) arranged to connect with the first metal layer
    15 (121), wherein a portion of the third aluminum oxide layer (123) is removed between the first electric contact (150) and the first metal layer (121) by wet etching.
    [7] 7. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 5 or 6, further comprising:
    20 the insulation layer (141) arranged above the third aluminum oxide layer (123), wherein the insulation layer (141) comprising tetraethyl orthosilicate.
    [8] 8. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 7, further comprising:
    25 a fourth aluminum oxide layer (132) arranged above the insulation layer (141), wherein the fourth aluminum oxide layer (132) being part of the second support layer (132-133) of the second metallic mirror structure (130).
    [9] 9. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) 30 of claim 8, wherein the second metal layer (131) of the second metallic mirror structure (130) is arranged above the fourth aluminum oxide layer (132).
    [10] 10. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 9, further comprising:
    20175641 prh 03 -07- 2017 a fifth aluminum oxide layer (133) arranged above the second metal layer (131), wherein the fifth aluminum oxide layer (133) being part of the second support layer (132-133) ofthe second metallic mirror structure (130).
    5
    [11] 11. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of claim 10, further comprising:
    a second electric contact (151) arranged to connect with the second metal layer (131), wherein a portion of the fifth aluminum oxide layer (133) is removed between the second electric contact (151) and the second metal layer (131) 10 by wet etching.
    [12] 12. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of any of claims 1-11, wherein the second metallic mirror structure (130) comprises through-holes (134) for removing at least part of the insulation layer (141) to provide
    15 the Fabry-Perot cavity (140) between the first (120) and the second metallic mirror structure (130).
    [13] 13. The microelectromechanical (MEMS) Fabry-Perot interferometer (100) of any of claims 1 -12, wherein
    20 the transparent substrate (110) comprises fused quartz glass or fused silica glass;
    the aluminum oxide comprises AI2O3; and the titanium dioxide comprises TiC>2.
    25
    [14] 14. A semiconductor apparatus comprising a Fabry-Perot interferometer (100) of claim 1.
    [15] 15. A method for manufacturing a microelectromechanical (MEMS) Fabry-
    Perot interferometer (100), comprising:
    30 providing a transparent substrate (110);
    depositing a first metallic mirror structure (120) on the transparent substrate (110), comprising a first metal layer (121) and a first support layer (122123);
    depositing a second metallic mirror structure (130) above the first metallic mirror structure (120) on opposite side of the first metallic mirror structure (120) in view of the transparent substrate (110), the second metallic mirror structure (130) comprising a second metal layer (131) and a second support layer (132-133),
    5 wherein the first (122-123) and the second support layer (132-133) are parallel and comprising at least one of aluminum oxide or titanium dioxide;
    forming a Fabry-Perot cavity (140) between the first (122-123) and the second support layer (132-133), whereby the cavity (140) is formed by providing an insulation layer (141) on the first metallic mirror structure (120), and at least partially 10 removing the insulation layer (141) after providing the second metallic mirror structure (130); and forming electrodes (150-151) for providing electrical contacts to the first (121) and the second metal layer (131).
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